General Description
This Power MOSFET is produced using Maple semi‘s
advanced planar stripe DMOS technology.
This advanced technology has been especially tailored
to minimize on
-state resistance, provide superior switching
Features
- 7.5A, 650V, RDS(on) = 1.4Ω@VGS = 10 V
- Low gate charge ( typical 48nC)
- High ruggedness
- Fast switching
to minimize on
state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction based on half bridge topology.
Fast switching
- 100% avalanche tested
- Improved dv/dt capability
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