SYKJ50N06是一款50A电流耐压60V的N沟道TO-252封装的大功率MOS
SYKJ50N06Description
This N-Channel MOSFET uses advanced trench technology and design to provideexcellent RDS(on) with low gate charge. It can be used in a wide variety of applications.Features
1) VDS =60V,I D =50A,RDS(ON) :16mΩ (Max)@VGS =10V
2) Low gate charge.
3) Green device available.
4) Advanced high cell denity trench technology for ultra R DS(ON) .
5) Excellent package for good heat dissipation.
SYKJ50N06应用领域：
LED汽车灯，HID安定器，小家电，充电器灯一系列产品
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