| 型号 | 封装 | 品牌 | 备注 | IRF2804S | D2-PAK/TO-263 | IR品牌 | Original 全新原装 |
40V N沟道 HEXFET MOSFET TO-263
PDF文件IRF2804产品特点：
先进的工艺技术
超低电阻
175°C的工作温度
快速切换
重复雪崩长达TJMAX
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
IRF2804S产品内部原理图：
IRF2804S产品描述：
专门为汽车应用而设计的，这的HEXFET功率MOSFET采用了最新的加工技术，以实现极低的每硅阻力区。这个额外的功能的设计是一个175°C结工作温度，快速开关速度和改进的重复雪崩额定值。这些特点结合起来，使本设计的一个非常有效和可靠的设备汽车用铈
应用及其他各种应用。
Specifically designed for Automotive applications,this HEXFET庐 Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive
Applications and a wide variety of other applications.
IRF2804S产品绝对最大额定值：
