年终特惠 瑞萨IGBT单管RJH60D0DPK
RJH60D0DPK 600V - 22A – IGBT
Features：
• Short circuit withstand time (5 s typ.)
• Low collector to emitter saturation voltageVCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)
• Built in fast recovery diode (100 ns typ.) in one package
• Trench gate and thin wafer technology
• High speed switchingtf = 70 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 22 A, Rg = 5 , Ta = 25°C, inductive load)
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