硅基MOSFET和IGBT的先进替代品
与硅器件相比,碳化硅(SiC) MOSFET的能效更高,同时系统尺寸与重量可以进一步缩减,从而帮助电力电子系统工程师实现更出色的开关性能。Littelfuse内部设计的LSIC1MO120E0080系列1200V 80mΩ N沟道SiC MOSFET采用TO-247-3L封装,提供极低的栅极电荷、输出电容以及低栅极电阻,可实现高频开关和超低RDS(ON)。
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